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Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery
SDT12S60
Product Summary VRRM Qc IF 600 30 12
P-TO220-2-2.
Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25C Operating and storage temperature
Page 1

V nC A
Type SDT12S60
Package P-TO220-2-2.
Ordering Code Q67040-S4470
Marking D12S60
Pin 1 C
Pin 2 A
Pin 3
Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous forward current, TC=100C RMS forward current, f=50Hz
TC=25C, tp =10ms
Symbol IF I FRMS
Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175
Unit A
Surge non repetitive forward current, sine halfwave I FSM Repetitive peak forward current
Tj=150C, TC=100C, D=0.1
I FRM I FMAX i2dt
Non repetitive peak forward current
tp =10s, TC=25C
i 2 t value, TC=25C, tp =10ms
As V W C
VRRM VRSM Ptot T j , Tstg
2002-01-14
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol min. Values typ.
SDT12S60
Unit max. 1.7 62 K/W
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=12A, T j=25C IF=12A, T j=150C
Symbol min. VF IR -
Values typ. max.
Unit
V 1.5 1.7 40 100 1.7 2.1 A 400 2000
Reverse current
V R=600V, Tj=25C V R=600V, Tj=150C
Electrical Characteristics,at Tj = 25 C, unless otherwise specified Parameter AC Characteristics Total capacitive charge
VR =400V, IF =12A, diF /dt=200A/s, Tj=150C
Symbol min. Qc trr C Page 2
Values typ. 30 n.a. max. -
Unit
-
nC ns pF
Switching time
VR =400V, IF =12A, diF /dt=200A/s, Tj=150C
Total capacitance
VR =1V, TC =25C, f=1MHz VR =300V, TC =25C, f=1MHz VR =600V, TC =25C, f=1MHz
450 45 43
2002-01-14
Preliminary data 1 Power dissipation Ptot = f (TC )
90
SDT12S60
2 Diode forward current IF = f (TC ) parameter: Tj 175 C
24
W
A
20
70 60
18 16
P tot
IF
50 40 30 20 10 0 0
14 12 10 8 6 4 2
20
40
60
80
100 120 140
C 180 TC
0 0
20
3 Typ. forward characteristic IF = f (VF ) parameter: Tj , tp = 350 s
24
4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF ) TC =100C, d = tp/T
44
W A P F(AV)
150C 125C 100C 25C -40C d=0.1 d=0.2 36 d=0.5 d=1
32 28 24 12 20 8 16 12 4 8 4 0 0 0.5 1 1.5
16
IF
V
VF
2.5
0 0
2
Page 3
40
60
80
100 120 140
C TC
180
4
6
8
10
12
16 A IF(AV)
2002-01-14
Preliminary data 5 Typ. reverse current vs. reverse voltage IR =f(VR)
10 2
SDT12S60
6 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T
10 1
SDT12S60
A
150C
10 1 125C
K/W
100C 25C
10 0
10 0
Z thJC
IR
10 -1
D = 0.50 10
-1
10
-2
0.20 0.10 0.05 0.02 0.01
10
-2
10
-3
single pulse
10 -3 100 150 200 250 300 350 400 450 500
V VR
600
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
7 Typ. capacitance vs. reverse voltage C= f(VR ) parameter: TC = 25 C, f = 1 MHz
600
8 Typ. C stored energy EC=f(VR )
9
pF
500 450
J
7 6 5 4 3 2 1 0 0
C
350 300 250 200 150 100 50 00 10 10
1
10
2
V VR
10
3
EC
400
100
200
300
400
V
VR
600
Page 4
2002-01-14
Preliminary data 9 Typ. capacitive charge vs. current slope Qc =f(diF /dt) parameter: Tj = 150 C
40
SDT12S60
nC
32 28
IF *2
IF
Qc
IF *0.5
24 20 16 12 8 4 0 100 200 300 400 500 600 700 800 A/s 1000
di F/dt
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2002-01-14
Preliminary data
SDT12S60
TO-220-2-2
A P E
N
dimensions symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
D U H B V
F W J G
F G H J K L M N P T U V W
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
C
M
T K
X
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2002-01-14
Preliminary data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
SDT12S60
Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 7
2002-01-14
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